S29GL01GS10FAI010
The S29GL01GS10FAI010 is a 1 Gb parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with a 3.0 V core, versatile I/O (1.65 V to VCC), and 16-bit data bus. It supports asynchronous page mode reads with 15 ns page access, 100 ns random access, 512-byte write buffer, 128 kB uniform sector erase, and internal ECC for single-bit error correction. Rated for -40°C to +85°C (AEC-Q100 Grade 3), it is ideal for automotive and industrial applications.
Key Specifications
| Complete manufacturer part number | S29GL01GS10FAI010 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL01GS10FAI010 is a 1 Gb parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with a 3.0 V core, versatile I/O (1.65 V to VCC), and 16-bit data bus. It supports asynchronous page mode reads with 15 ns page access, 100 ns random access, 512-byte write buffer, 128 kB uniform sector erase, and internal ECC for single-bit error correction. Rated for -40°C to +85°C (AEC-Q100 Grade 3), it is ideal for automotive and industrial applications. |
| Package / case | P-LFBGA-64-800 |
| Product category | Component specifications |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 1,384 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.