S29GL01GS10FHI010
The S29GL01GS10FHI010 is a 1 Gb (128 MB) parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with a 3.0 V core and versatile I/O from 1.65 V to VCC. It delivers 15 ns page access and 100 ns random access times, a 512-byte programming buffer, internal ECC, and advanced sector protection. Rated for 100,000 program/erase cycles and 20 years data retention, it operates from -40°C to +85°C and meets AEC-Q100 for automotive use.
Key Specifications
| Complete manufacturer part number | S29GL01GS10FHI010 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL01GS10FHI010 is a 1 Gb (128 MB) parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with a 3.0 V core and versatile I/O from 1.65 V to VCC. It delivers 15 ns page access and 100 ns random access times, a 512-byte programming buffer, internal ECC, and advanced sector protection. Rated for 100,000 program/erase cycles and 20 years data retention, it operates from -40°C to +85°C and meets AEC-Q100 for automotive use. |
| Package / case | PG-LFBGA-64-800 |
| Product category | Component specifications |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 11,069 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.