S29GL01GS10TFA010
The S29GL01GS10TFA010 is a 1 Gb (128 MB) parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with a 3.0 V core and versatile I/O (1.65 V to VCC). It features a 16-bit data bus, 100 ns random access, 15 ns page access, and a 512-byte programming buffer for fast writes. The device offers 128 kB uniform sector erase, hardware ECC for single-bit error correction, advanced sector protection, and operates from -40°C to +85°C (AEC-Q100 Grade 3).
Key Specifications
| Complete manufacturer part number | S29GL01GS10TFA010 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL01GS10TFA010 is a 1 Gb (128 MB) parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with a 3.0 V core and versatile I/O (1.65 V to VCC). It features a 16-bit data bus, 100 ns random access, 15 ns page access, and a 512-byte programming buffer for fast writes. The device offers 128 kB uniform sector erase, hardware ECC for single-bit error correction, advanced sector protection, and operates from -40°C to +85°C (AEC-Q100 Grade 3). |
| Package / case | PG-TSOP-56-800 |
| Product category | Component specifications |
| Pins | 56 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 6,815 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.