S29GL01GS11FHB023
The S29GL01GS11FHB023 is a 1 Gb MIRRORBIT™ Eclipse NOR flash memory with a 3.0 V core and I/O voltage range from 1.65 V to 3.6 V. It features a 16-bit parallel data bus, page access time as low as 15 ns, and random access time of 100 ns. The device offers a 512-byte programming buffer, 100,000 program/erase cycles per sector, and up to 20 years data retention. Advanced sector protection, internal ECC, and AEC-Q100 grade options ensure robust operation in embedded systems.
Key Specifications
| Complete manufacturer part number | S29GL01GS11FHB023 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL01GS11FHB023 is a 1 Gb MIRRORBIT™ Eclipse NOR flash memory with a 3.0 V core and I/O voltage range from 1.65 V to 3.6 V. It features a 16-bit parallel data bus, page access time as low as 15 ns, and random access time of 100 ns. The device offers a 512-byte programming buffer, 100,000 program/erase cycles per sector, and up to 20 years data retention. Advanced sector protection, internal ECC, and AEC-Q100 grade options ensure robust operation in embedded systems. |
| Package / case | PG-LFBGA-64-800 |
| Product category | Component specifications |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 105 °C |
| In stock | 9,533 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.