S29GL01GS11TFA010
The S29GL01GS11TFA010 is a 1 Gb parallel NOR flash memory with a 16-bit data bus, built on 65 nm MIRRORBIT™ Eclipse technology. It operates from 2.7 V to 3.6 V, supports I/O voltages from 1.65 V to VCC, and delivers random access times as fast as 100 ns. Features include a 512-byte write buffer, advanced sector protection, internal ECC, and uniform 128 KB sectors. Qualified to AEC-Q100 Grade 2 (–40°C to +105°C), it supports 100,000 program/erase cycles.
Key Specifications
| Complete manufacturer part number | S29GL01GS11TFA010 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL01GS11TFA010 is a 1 Gb parallel NOR flash memory with a 16-bit data bus, built on 65 nm MIRRORBIT™ Eclipse technology. It operates from 2.7 V to 3.6 V, supports I/O voltages from 1.65 V to VCC, and delivers random access times as fast as 100 ns. Features include a 512-byte write buffer, advanced sector protection, internal ECC, and uniform 128 KB sectors. Qualified to AEC-Q100 Grade 2 (–40°C to +105°C), it supports 100,000 program/erase cycles. |
| Package / case | PG-TSOP-56-800 |
| Product category | Flash memory |
| Pins | 56 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 10,337 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.