S29GL01GT11TFIV13
The S29GL01GT11TFIV13 is a 1 Gb (128 MB) parallel MIRRORBIT™ flash memory built on 45-nm technology for embedded and automotive systems. It operates from a single 2.7 V to 3.6 V supply with I/O voltage from 1.65 V to VCC, offering 110 ns random access and 15 ns page access. Features include a 512-byte programming buffer, internal ECC, uniform 128 KB sectors, and support for 100,000 program/erase cycles. Automotive-grade variants meet AEC-Q100 Grade 2 (-40°C to +105°C).
Key Specifications
| Complete manufacturer part number | S29GL01GT11TFIV13 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL01GT11TFIV13 is a 1 Gb (128 MB) parallel MIRRORBIT™ flash memory built on 45-nm technology for embedded and automotive systems. It operates from a single 2.7 V to 3.6 V supply with I/O voltage from 1.65 V to VCC, offering 110 ns random access and 15 ns page access. Features include a 512-byte programming buffer, internal ECC, uniform 128 KB sectors, and support for 100,000 program/erase cycles. Automotive-grade variants meet AEC-Q100 Grade 2 (-40°C to +105°C). |
| Package / case | PG-TSOP-56-800 |
| Product category | Component specifications |
| Pins | 56 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 7,729 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.