S29GL01GT11TFIV23
The S29GL01GT11TFIV23 is a 1 Gb (128 MB) MIRRORBIT™ flash memory with parallel interface and 3.0 V core. It supports I/O voltages from 1.65 V to 3.6 V, ×8/×16 data bus, random access up to 120 ns, and page access up to 15 ns. Features include a 512-byte programming buffer, internal ECC, uniform 128 KB sectors, and up to 100,000 program/erase cycles. Operating from -40°C to +105°C, it meets AEC-Q100 Grade 2 standards for embedded, industrial, and automotive applications.
Key Specifications
| Complete manufacturer part number | S29GL01GT11TFIV23 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL01GT11TFIV23 is a 1 Gb (128 MB) MIRRORBIT™ flash memory with parallel interface and 3.0 V core. It supports I/O voltages from 1.65 V to 3.6 V, ×8/×16 data bus, random access up to 120 ns, and page access up to 15 ns. Features include a 512-byte programming buffer, internal ECC, uniform 128 KB sectors, and up to 100,000 program/erase cycles. Operating from -40°C to +105°C, it meets AEC-Q100 Grade 2 standards for embedded, industrial, and automotive applications. |
| Package / case | PG-TSOP-56-800 |
| Product category | Flash memory |
| Pins | 56 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 4,155 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.