S29GL01GT12TFN023
The S29GL01GT12TFN023 is a 1 Gb (128 MB) MIRRORBIT™ Flash memory with a parallel interface, fabricated on 45-nm technology. It delivers random access times down to 120 ns and page access times of 15 ns, supporting a versatile I/O voltage range from 1.65 V to 3.6 V. Operating from –40°C to +125°C, it features uniform 128 KB sectors, a 512-byte programming buffer, internal ECC, and up to 100,000 program/erase cycles. AEC-Q100 qualification makes it ideal for automotive storage.
Key Specifications
| Complete manufacturer part number | S29GL01GT12TFN023 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL01GT12TFN023 is a 1 Gb (128 MB) MIRRORBIT™ Flash memory with a parallel interface, fabricated on 45-nm technology. It delivers random access times down to 120 ns and page access times of 15 ns, supporting a versatile I/O voltage range from 1.65 V to 3.6 V. Operating from –40°C to +125°C, it features uniform 128 KB sectors, a 512-byte programming buffer, internal ECC, and up to 100,000 program/erase cycles. AEC-Q100 qualification makes it ideal for automotive storage. |
| Package / case | PG-TSOP-56-800 |
| Product category | Component specifications |
| Pins | 56 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 125 °C |
| In stock | 5,217 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.