S29GL128S11FHVV23

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The S29GL128S11FHVV23 is a 128 Mb parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with a 16-bit data bus and asynchronous read access as fast as 110 ns random and 25 ns page mode. Operating from 2.7 V to 3.6 V with I/O down to 1.65 V, it features a 512-byte write buffer, internal ECC, advanced sector protection, and 100,000 program/erase cycles. Rated for –40°C to +105°C, it is ideal for reliable, high-speed embedded applications.

Key Specifications

Complete manufacturer part numberS29GL128S11FHVV23
ManufacturerInfineon Technologies
DescriptionThe S29GL128S11FHVV23 is a 128 Mb parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with a 16-bit data bus and asynchronous read access as fast as 110 ns random and 25 ns page mode. Operating from 2.7 V to 3.6 V with I/O down to 1.65 V, it features a 512-byte write buffer, internal ECC, advanced sector protection, and 100,000 program/erase cycles. Rated for –40°C to +105°C, it is ideal for reliable, high-speed embedded applications.
Package / casePG-LFBGA-64-800
Product categoryComponent specifications
Pins64
Operating Temperature minimum (manufacturer family record)-40 °C
Operating Temperature maximum (manufacturer family record)105 °C
In stock3,658 pcs
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: S29GL128S11FHVV23
Manufacturer: Infineon Technologies
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