S29GL256S10DHA023
The S29GL256S10DHA023 is a 256 Mb parallel NOR flash memory using MIRRORBIT™ Eclipse 65 nm technology. It offers random access times of 90 ns and page access as fast as 15 ns, with a versatile I/O voltage range from 1.65 V to 3.6 V. Uniform 128 KB sectors, a 512-byte programming buffer, and internal ECC for single-bit error correction enhance reliability. Operating from 2.7 V to 3.6 V, it supports automotive AEC-Q100 Grade 2 (-40°C to +105°C).
Key Specifications
| Complete manufacturer part number | S29GL256S10DHA023 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL256S10DHA023 is a 256 Mb parallel NOR flash memory using MIRRORBIT™ Eclipse 65 nm technology. It offers random access times of 90 ns and page access as fast as 15 ns, with a versatile I/O voltage range from 1.65 V to 3.6 V. Uniform 128 KB sectors, a 512-byte programming buffer, and internal ECC for single-bit error correction enhance reliability. Operating from 2.7 V to 3.6 V, it supports automotive AEC-Q100 Grade 2 (-40°C to +105°C). |
| Package / case | PG-LFBGA-64-801 |
| Product category | Flash memory |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 6,191 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.