S29GL256S10FAIV10
The S29GL256S10FAIV10 is a 256 Mb parallel NOR flash memory based on 65 nm MIRRORBIT™ Eclipse technology, with a 3.0 V core and versatile I/O (1.65 V to 3.6 V). It delivers random access times of 90 ns and page access times of 15 ns, and features a 512-byte programming buffer. Uniform 128 KB sector erase and internal ECC enhance data integrity. With 100,000 program/erase cycles and 20 years data retention, it is ideal for automotive, industrial, and embedded applications.
Key Specifications
| Complete manufacturer part number | S29GL256S10FAIV10 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL256S10FAIV10 is a 256 Mb parallel NOR flash memory based on 65 nm MIRRORBIT™ Eclipse technology, with a 3.0 V core and versatile I/O (1.65 V to 3.6 V). It delivers random access times of 90 ns and page access times of 15 ns, and features a 512-byte programming buffer. Uniform 128 KB sector erase and internal ECC enhance data integrity. With 100,000 program/erase cycles and 20 years data retention, it is ideal for automotive, industrial, and embedded applications. |
| Package / case | P-LFBGA-64-800 |
| Product category | Flash memory |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 6,764 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.