S29GL256S10FHB023
The S29GL256S10FHB023 is a 256 Mb parallel NOR flash memory built on Infineon's 65 nm MIRRORBIT™ Eclipse technology. It offers random access times down to 90 ns and page access as fast as 15 ns, operates from a single 2.7 V to 3.6 V supply, and supports a ×16 data bus. Features include asynchronous page-mode reads, 512-byte programming buffer, internal ECC for single-bit error correction, advanced sector protection, and up to 100,000 program/erase cycles per sector.
Key Specifications
| Complete manufacturer part number | S29GL256S10FHB023 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL256S10FHB023 is a 256 Mb parallel NOR flash memory built on Infineon's 65 nm MIRRORBIT™ Eclipse technology. It offers random access times down to 90 ns and page access as fast as 15 ns, operates from a single 2.7 V to 3.6 V supply, and supports a ×16 data bus. Features include asynchronous page-mode reads, 512-byte programming buffer, internal ECC for single-bit error correction, advanced sector protection, and up to 100,000 program/erase cycles per sector. |
| Package / case | PG-LFBGA-64-800 |
| Product category | Flash memory |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 105 °C |
| In stock | 5,795 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.