S29GL256S10GHB013
The S29GL256S10GHB013 is a 256 Mb parallel NOR flash memory based on 65 nm MIRRORBIT™ Eclipse technology, with a 16-bit data bus and asynchronous random access as fast as 100 ns. It operates from a single 2.7 V to 3.6 V supply, supports versatile I/O (1.65 V to VCC), and features a 512-byte programming buffer, advanced sector protection, and internal ECC. Qualified to AEC-Q100 Grade 2 (–40°C to +105°C), it is ideal for automotive and industrial applications.
Key Specifications
| Complete manufacturer part number | S29GL256S10GHB013 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL256S10GHB013 is a 256 Mb parallel NOR flash memory based on 65 nm MIRRORBIT™ Eclipse technology, with a 16-bit data bus and asynchronous random access as fast as 100 ns. It operates from a single 2.7 V to 3.6 V supply, supports versatile I/O (1.65 V to VCC), and features a 512-byte programming buffer, advanced sector protection, and internal ECC. Qualified to AEC-Q100 Grade 2 (–40°C to +105°C), it is ideal for automotive and industrial applications. |
| Package / case | PG-VFBGA-56-803 |
| Product category | Component specifications |
| Pins | 56 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 105 °C |
| In stock | 7,092 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.