S29GL256S10TFIV13

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The S29GL256S10TFIV13 is a 256 Mb parallel NOR flash memory built on 65 nm MIRRORBIT™ Eclipse technology. It features a 3.0 V core, versatile I/O (1.65 V to VCC), random access times as fast as 90 ns, page access times down to 15 ns, ×16 data bus, and a 512-byte programming buffer. Automatic single-bit ECC and sector protection ensure reliability for embedded and automotive applications. Operating from -40°C to +105°C, it supports 100,000 program/erase cycles.

Key Specifications

Complete manufacturer part numberS29GL256S10TFIV13
ManufacturerInfineon Technologies
DescriptionThe S29GL256S10TFIV13 is a 256 Mb parallel NOR flash memory built on 65 nm MIRRORBIT™ Eclipse technology. It features a 3.0 V core, versatile I/O (1.65 V to VCC), random access times as fast as 90 ns, page access times down to 15 ns, ×16 data bus, and a 512-byte programming buffer. Automatic single-bit ECC and sector protection ensure reliability for embedded and automotive applications. Operating from -40°C to +105°C, it supports 100,000 program/erase cycles.
Package / casePG-TSOP-56-800
Product categoryFlash memory
Pins56
Operating Temperature minimum (manufacturer family record)-40 °C
Operating Temperature maximum (manufacturer family record)85 °C
In stock10,761 pcs
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: S29GL256S10TFIV13
Manufacturer: Infineon Technologies
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