S29GL256S11DHIV23
The S29GL256S11DHIV23 is a 256 Mb, 3.0 V parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology. It features a 16-bit data bus, versatile I/O voltage (1.65 V to VCC), random access as fast as 110 ns, and page mode reads down to 30 ns. With a 512-byte write buffer, hardware ECC, and advanced sector protection, it supports up to 100,000 program/erase cycles and 20-year data retention, ideal for high-reliability embedded and automotive applications.
Key Specifications
| Complete manufacturer part number | S29GL256S11DHIV23 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL256S11DHIV23 is a 256 Mb, 3.0 V parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology. It features a 16-bit data bus, versatile I/O voltage (1.65 V to VCC), random access as fast as 110 ns, and page mode reads down to 30 ns. With a 512-byte write buffer, hardware ECC, and advanced sector protection, it supports up to 100,000 program/erase cycles and 20-year data retention, ideal for high-reliability embedded and automotive applications. |
| Package / case | PG-LFBGA-64-801 |
| Product category | Flash memory |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 8,689 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.