S29GL256S11DHV023
The S29GL256S11DHV023 is a 256 Mb parallel NOR flash memory based on Infineon's MIRRORBIT™ Eclipse 65 nm technology, operating at 3.0 V with versatile I/O (1.65 V to VCC). It features a 16-bit data bus, 110 ns random access, 15 ns page access, and a 512-byte write buffer for fast programming. With 128 KB sector erase, advanced sector protection, internal ECC, and 100,000 program/erase cycles, it operates from -40°C to +105°C for reliable embedded and automotive use.
Key Specifications
| Complete manufacturer part number | S29GL256S11DHV023 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL256S11DHV023 is a 256 Mb parallel NOR flash memory based on Infineon's MIRRORBIT™ Eclipse 65 nm technology, operating at 3.0 V with versatile I/O (1.65 V to VCC). It features a 16-bit data bus, 110 ns random access, 15 ns page access, and a 512-byte write buffer for fast programming. With 128 KB sector erase, advanced sector protection, internal ECC, and 100,000 program/erase cycles, it operates from -40°C to +105°C for reliable embedded and automotive use. |
| Package / case | PG-LFBGA-64-801 |
| Product category | Component specifications |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 105 °C |
| In stock | 12,912 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.