S29GL256S11TFIV10
The S29GL256S11TFIV10 is a 256 Mb parallel NOR flash memory based on MIRRORBIT™ Eclipse 65 nm technology. It features a 3.0 V core, versatile I/O (1.65 V to 3.6 V), random access time of 110 ns, page access as low as 30 ns, 512-byte programming buffer, and 128 kbyte sector erase. Operating from -40°C to +105°C, it achieves up to 100,000 program/erase cycles and 20 years data retention. Ideal for automotive, industrial, and embedded applications requiring high density.
Key Specifications
| Complete manufacturer part number | S29GL256S11TFIV10 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL256S11TFIV10 is a 256 Mb parallel NOR flash memory based on MIRRORBIT™ Eclipse 65 nm technology. It features a 3.0 V core, versatile I/O (1.65 V to 3.6 V), random access time of 110 ns, page access as low as 30 ns, 512-byte programming buffer, and 128 kbyte sector erase. Operating from -40°C to +105°C, it achieves up to 100,000 program/erase cycles and 20 years data retention. Ideal for automotive, industrial, and embedded applications requiring high density. |
| Package / case | PG-TSOP-56-800 |
| Product category | Component specifications |
| Pins | 56 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 7,083 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.