S29GL512S10FAI013
The S29GL512S10FAI013 is a 512 Mb parallel NOR flash memory built on 65 nm MIRRORBIT™ Eclipse technology. It features a 3.0 V core, versatile I/O (1.65 V to 3.6 V), a 16-bit data bus, random access down to 100 ns, and page access as fast as 15 ns. Uniform 128 kbyte sectors, a 512 byte programming buffer, and internal ECC ensure robust performance. With 100,000 program/erase cycles, it serves automotive, industrial, and networking applications.
Key Specifications
| Complete manufacturer part number | S29GL512S10FAI013 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512S10FAI013 is a 512 Mb parallel NOR flash memory built on 65 nm MIRRORBIT™ Eclipse technology. It features a 3.0 V core, versatile I/O (1.65 V to 3.6 V), a 16-bit data bus, random access down to 100 ns, and page access as fast as 15 ns. Uniform 128 kbyte sectors, a 512 byte programming buffer, and internal ECC ensure robust performance. With 100,000 program/erase cycles, it serves automotive, industrial, and networking applications. |
| Package / case | P-LFBGA-64-800 |
| Product category | Flash memory |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 5,656 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.