S29GL512S10TFA010
The S29GL512S10TFA010 is a 512 Mb parallel NOR flash memory using MIRRORBIT™ Eclipse 65 nm technology. It offers random access times of 100 ns and page access as fast as 15 ns, operates from a 2.7 V to 3.6 V supply, and supports I/O voltages from 1.65 V to VCC. Features include ×16 data bus, 512-byte programming buffer, robust sector protection, internal ECC, and up to 100,000 program/erase cycles.
Key Specifications
| Complete manufacturer part number | S29GL512S10TFA010 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512S10TFA010 is a 512 Mb parallel NOR flash memory using MIRRORBIT™ Eclipse 65 nm technology. It offers random access times of 100 ns and page access as fast as 15 ns, operates from a 2.7 V to 3.6 V supply, and supports I/O voltages from 1.65 V to VCC. Features include ×16 data bus, 512-byte programming buffer, robust sector protection, internal ECC, and up to 100,000 program/erase cycles. |
| Package / case | PG-TSOP-56-800 |
| Product category | Component specifications |
| Pins | 56 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 1,795 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.