S29GL512S10TFI013
The S29GL512S10TFI013 is a 512 Mb (64 MB), 3.0 V parallel NOR flash memory based on 65 nm MIRRORBIT™ Eclipse technology. It features a 16-bit data bus, 100 ns random access, 15 ns page access, and a 512-byte programming buffer. With advanced ECC for single-bit error correction, robust sector protection, and up to 100,000 program/erase cycles, it is ideal for automotive, industrial, and embedded systems requiring reliable, high-density non-volatile storage.
Key Specifications
| Complete manufacturer part number | S29GL512S10TFI013 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512S10TFI013 is a 512 Mb (64 MB), 3.0 V parallel NOR flash memory based on 65 nm MIRRORBIT™ Eclipse technology. It features a 16-bit data bus, 100 ns random access, 15 ns page access, and a 512-byte programming buffer. With advanced ECC for single-bit error correction, robust sector protection, and up to 100,000 program/erase cycles, it is ideal for automotive, industrial, and embedded systems requiring reliable, high-density non-volatile storage. |
| Package / case | PG-TSOP-56-800 |
| Product category | Flash memory |
| Pins | 56 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 12,215 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.