S29GL512S11DHA010
The S29GL512S11DHA010 is a 512 Mb parallel NOR flash memory using Infineon's 65 nm MIRRORBIT™ Eclipse technology. It features a 16-bit data bus, 3.0 V core, versatile I/O from 1.65 V to VCC, 100 ns random and 15 ns page access times. With 100,000 program/erase cycles, 20 years data retention, hardware ECC, and advanced sector protection, it is AEC-Q100 qualified for automotive use from -40°C to +85°C, ideal for code storage and embedded systems.
Key Specifications
| Complete manufacturer part number | S29GL512S11DHA010 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512S11DHA010 is a 512 Mb parallel NOR flash memory using Infineon's 65 nm MIRRORBIT™ Eclipse technology. It features a 16-bit data bus, 3.0 V core, versatile I/O from 1.65 V to VCC, 100 ns random and 15 ns page access times. With 100,000 program/erase cycles, 20 years data retention, hardware ECC, and advanced sector protection, it is AEC-Q100 qualified for automotive use from -40°C to +85°C, ideal for code storage and embedded systems. |
| Package / case | PG-LFBGA-64-801 |
| Product category | Flash memory |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 7,398 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.