S29GL512S11DHAV10
The S29GL512S11DHAV10 is a 512 Mb MIRRORBIT™ Eclipse flash memory built on 65 nm technology for embedded and automotive systems. It features a parallel interface, 3.0 V core, versatile I/O voltage from 1.65 V to VCC, and random access times as fast as 110 ns. With a 512-byte programming buffer, automatic ECC, uniform 128 KB sector erase, and advanced sector protection, it ensures robust data integrity. Operating from -40°C to +105°C (AEC-Q100 Grade 2).
Key Specifications
| Complete manufacturer part number | S29GL512S11DHAV10 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512S11DHAV10 is a 512 Mb MIRRORBIT™ Eclipse flash memory built on 65 nm technology for embedded and automotive systems. It features a parallel interface, 3.0 V core, versatile I/O voltage from 1.65 V to VCC, and random access times as fast as 110 ns. With a 512-byte programming buffer, automatic ECC, uniform 128 KB sector erase, and advanced sector protection, it ensures robust data integrity. Operating from -40°C to +105°C (AEC-Q100 Grade 2). |
| Package / case | PG-LFBGA-64-801 |
| Product category | Flash memory |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 7,376 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.