S29GL512S11DHAV23
The S29GL512S11DHAV23 is a 512 Mb parallel NOR flash memory based on 65 nm MIRRORBIT™ Eclipse technology, with random access times down to 100 ns and page access as fast as 15 ns. Operating from a 3.0 V core and versatile I/O from 1.65 V to 3.6 V, it supports industrial and automotive grades up to +105°C. Uniform 128 kbyte sectors, a 512-byte programming buffer, hardware ECC, and advanced sector protection ensure robust data integrity and endurance for embedded storage.
Key Specifications
| Complete manufacturer part number | S29GL512S11DHAV23 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512S11DHAV23 is a 512 Mb parallel NOR flash memory based on 65 nm MIRRORBIT™ Eclipse technology, with random access times down to 100 ns and page access as fast as 15 ns. Operating from a 3.0 V core and versatile I/O from 1.65 V to 3.6 V, it supports industrial and automotive grades up to +105°C. Uniform 128 kbyte sectors, a 512-byte programming buffer, hardware ECC, and advanced sector protection ensure robust data integrity and endurance for embedded storage. |
| Package / case | PG-LFBGA-64-801 |
| Product category | Flash memory |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 6,756 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.