S29GL512S11DHB013
The S29GL512S11DHB013 is a 512 Mb parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology. It operates with a 3.0 V core and I/O from 1.65 V to VCC, features a 16-bit data bus, 110 ns random access, 25 ns page mode read, 512-byte programming buffer, and 128-kbyte sector erase. Internal ECC provides single-bit error correction. Qualified to AEC-Q100 Grade 2 (–40°C to +105°C), it supports 100,000 program/erase cycles and 20 years data retention.
Key Specifications
| Complete manufacturer part number | S29GL512S11DHB013 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512S11DHB013 is a 512 Mb parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology. It operates with a 3.0 V core and I/O from 1.65 V to VCC, features a 16-bit data bus, 110 ns random access, 25 ns page mode read, 512-byte programming buffer, and 128-kbyte sector erase. Internal ECC provides single-bit error correction. Qualified to AEC-Q100 Grade 2 (–40°C to +105°C), it supports 100,000 program/erase cycles and 20 years data retention. |
| Package / case | PG-LFBGA-64-801 |
| Product category | Flash memory |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 105 °C |
| In stock | 11,051 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.