S29GL512S11FAIV10
The S29GL512S11FAIV10 is a 512 Mb (64 MB) parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with a 16-bit data bus and 3.0 V core. It supports asynchronous random access as fast as 110 ns and page mode reads down to 25 ns. Features include a 512-byte programming buffer, internal ECC for single-bit error correction, advanced sector protection, and 100,000 program/erase cycles.
Key Specifications
| Complete manufacturer part number | S29GL512S11FAIV10 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512S11FAIV10 is a 512 Mb (64 MB) parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with a 16-bit data bus and 3.0 V core. It supports asynchronous random access as fast as 110 ns and page mode reads down to 25 ns. Features include a 512-byte programming buffer, internal ECC for single-bit error correction, advanced sector protection, and 100,000 program/erase cycles. |
| Package / case | P-LFBGA-64-800 |
| Product category | Component specifications |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 2,355 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.