S29GL512S11FAIV13
The S29GL512S11FAIV13 is a 512 Mb (64 MB) parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with a 16-bit data bus and uniform 128 kB sectors. It operates from 2.7 V to 3.6 V with versatile I/O (1.65 V to VCC), and supports asynchronous random access times down to 110 ns and page access as fast as 25 ns. With a 512-byte write buffer, hardware ECC, and advanced sector protection, it is AEC-Q100 Grade 2 qualified for automotive and industrial use.
Key Specifications
| Complete manufacturer part number | S29GL512S11FAIV13 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512S11FAIV13 is a 512 Mb (64 MB) parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with a 16-bit data bus and uniform 128 kB sectors. It operates from 2.7 V to 3.6 V with versatile I/O (1.65 V to VCC), and supports asynchronous random access times down to 110 ns and page access as fast as 25 ns. With a 512-byte write buffer, hardware ECC, and advanced sector protection, it is AEC-Q100 Grade 2 qualified for automotive and industrial use. |
| Package / case | P-LFBGA-64-800 |
| Product category | Component specifications |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 11,213 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.