S29GL512S11FHB020
The S29GL512S11FHB020 is a 512 Mb parallel NOR flash memory using MIRRORBIT™ Eclipse 65 nm technology. It offers random access times down to 100 ns and page access as low as 15 ns. Supporting I/O voltages from 1.65 V to 3.6 V, it features uniform 128 kbyte sectors, a 512-byte programming buffer, and single 2.7 V to 3.6 V supply. Up to 100,000 program/erase cycles and 20 years data retention are possible. Sector protection and ECC enhance reliability for automotive systems.
Key Specifications
| Complete manufacturer part number | S29GL512S11FHB020 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512S11FHB020 is a 512 Mb parallel NOR flash memory using MIRRORBIT™ Eclipse 65 nm technology. It offers random access times down to 100 ns and page access as low as 15 ns. Supporting I/O voltages from 1.65 V to 3.6 V, it features uniform 128 kbyte sectors, a 512-byte programming buffer, and single 2.7 V to 3.6 V supply. Up to 100,000 program/erase cycles and 20 years data retention are possible. Sector protection and ECC enhance reliability for automotive systems. |
| Package / case | PG-LFBGA-64-800 |
| Product category | Component specifications |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 105 °C |
| In stock | 5,393 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.