S29GL512S11TFB010

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The S29GL512S11TFB010 is a 512 Mb, 3.0 V parallel NOR flash memory with a 16-bit data bus, built on 65 nm MIRRORBIT™ Eclipse technology. It offers random access times down to 110 ns and page access as fast as 25 ns, with a versatile I/O voltage range of 1.65 V to VCC.

Key Specifications

Complete manufacturer part numberS29GL512S11TFB010
ManufacturerInfineon Technologies
DescriptionThe S29GL512S11TFB010 is a 512 Mb, 3.0 V parallel NOR flash memory with a 16-bit data bus, built on 65 nm MIRRORBIT™ Eclipse technology. It offers random access times down to 110 ns and page access as fast as 25 ns, with a versatile I/O voltage range of 1.65 V to VCC.
Package / casePG-TSOP-56-800
Product categoryComponent specifications
Pins56
Operating Temperature minimum (manufacturer family record)-40 °C
Operating Temperature maximum (manufacturer family record)105 °C
In stock8,416 pcs
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: S29GL512S11TFB010
Manufacturer: Infineon Technologies
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