S29GL512S12DHBV10
The S29GL512S12DHBV10 is a 512 Mb parallel NOR flash memory based on Infineon's 65 nm MIRRORBIT™ Eclipse technology, featuring a 3.0 V core, versatile I/O from 1.65 V to 3.6 V, and 16-bit data width. It delivers 100 ns random and 15 ns page access times, supports a 512-byte programming buffer, advanced sector protection, and internal ECC for single-bit error correction.
Key Specifications
| Complete manufacturer part number | S29GL512S12DHBV10 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512S12DHBV10 is a 512 Mb parallel NOR flash memory based on Infineon's 65 nm MIRRORBIT™ Eclipse technology, featuring a 3.0 V core, versatile I/O from 1.65 V to 3.6 V, and 16-bit data width. It delivers 100 ns random and 15 ns page access times, supports a 512-byte programming buffer, advanced sector protection, and internal ECC for single-bit error correction. |
| Package / case | PG-LFBGA-64-801 |
| Product category | Flash memory |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 105 °C |
| In stock | 10,599 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.