S29GL512T10TFI023
The S29GL512T10TFI023 is a 512 Mb (64 MB) parallel NOR flash memory using 45-nm MIRRORBIT™ technology, with 15 ns page and 100 ns random access times. Operating from 2.7 V to 3.6 V and supporting I/O voltages from 1.65 V to VCC, it features a 512-byte programming buffer. Uniform 128 KB sectors, advanced sector protection, and internal ECC ensure data integrity. AEC-Q100 qualified, it supports 100,000 program/erase cycles and 20-year data retention.
Key Specifications
| Complete manufacturer part number | S29GL512T10TFI023 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512T10TFI023 is a 512 Mb (64 MB) parallel NOR flash memory using 45-nm MIRRORBIT™ technology, with 15 ns page and 100 ns random access times. Operating from 2.7 V to 3.6 V and supporting I/O voltages from 1.65 V to VCC, it features a 512-byte programming buffer. Uniform 128 KB sectors, advanced sector protection, and internal ECC ensure data integrity. AEC-Q100 qualified, it supports 100,000 program/erase cycles and 20-year data retention. |
| Package / case | PG-TSOP-56-800 |
| Product category | Component specifications |
| Pins | 56 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 1,343 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.