S29GL512T11DHAV23
The S29GL512T11DHAV23 is a 512 Mb (64 MB) parallel MIRRORBIT™ flash memory built on 45-nm technology. It operates from a 2.7 V to 3.6 V supply with versatile I/O (1.65 V to VCC), supporting ×8/×16 data bus and asynchronous page read with access times as fast as 15 ns. Uniform 128 KB sectors, 512-byte programming buffer, and internal ECC ensure data integrity. Endurance is rated for 100,000 cycles and 20-year retention.
Key Specifications
| Complete manufacturer part number | S29GL512T11DHAV23 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512T11DHAV23 is a 512 Mb (64 MB) parallel MIRRORBIT™ flash memory built on 45-nm technology. It operates from a 2.7 V to 3.6 V supply with versatile I/O (1.65 V to VCC), supporting ×8/×16 data bus and asynchronous page read with access times as fast as 15 ns. Uniform 128 KB sectors, 512-byte programming buffer, and internal ECC ensure data integrity. Endurance is rated for 100,000 cycles and 20-year retention. |
| Package / case | PG-LFBGA-64-801 |
| Product category | Component specifications |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 2,270 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.