S29GL512T11DHB010
The S29GL512T11DHB010 is a 512 Mb (64 MB) MIRRORBIT™ flash memory with a 3.0 V core and I/O voltage range from 1.65 V to 3.6 V. It supports ×8/×16 data bus widths, page access times down to 15 ns, and random access times as fast as 100 ns. With a 512-byte programming buffer, automatic ECC, and uniform 128 KB sector erase, it is suited for embedded systems needing high density and robust data protection. It meets AEC-Q100 standards and offers 100,000 program/erase cycles.
Key Specifications
| Complete manufacturer part number | S29GL512T11DHB010 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512T11DHB010 is a 512 Mb (64 MB) MIRRORBIT™ flash memory with a 3.0 V core and I/O voltage range from 1.65 V to 3.6 V. It supports ×8/×16 data bus widths, page access times down to 15 ns, and random access times as fast as 100 ns. With a 512-byte programming buffer, automatic ECC, and uniform 128 KB sector erase, it is suited for embedded systems needing high density and robust data protection. It meets AEC-Q100 standards and offers 100,000 program/erase cycles. |
| Package / case | PG-LFBGA-64-801 |
| Product category | Flash memory |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 105 °C |
| In stock | 11,673 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.