S29GL512T11FHIV23
The S29GL512T11FHIV23 is a 512 Mb (64 MB) parallel MIRRORBIT™ flash memory built on 45-nm technology. It operates from a single 2.7 V to 3.6 V supply, supports versatile I/O (1.65 V to VCC), ×8/×16 data bus, and access times of 15 ns page and 100 ns random. Uniform 128 KB sector erase, 512-byte programming buffer, internal ECC, and up to 100,000 program/erase cycles ensure reliability. Extended temperature ranges and AEC-Q100 grades suit code storage and data logging.
Key Specifications
| Complete manufacturer part number | S29GL512T11FHIV23 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512T11FHIV23 is a 512 Mb (64 MB) parallel MIRRORBIT™ flash memory built on 45-nm technology. It operates from a single 2.7 V to 3.6 V supply, supports versatile I/O (1.65 V to VCC), ×8/×16 data bus, and access times of 15 ns page and 100 ns random. Uniform 128 KB sector erase, 512-byte programming buffer, internal ECC, and up to 100,000 program/erase cycles ensure reliability. Extended temperature ranges and AEC-Q100 grades suit code storage and data logging. |
| Package / case | PG-LFBGA-64-800 |
| Product category | Component specifications |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 8,456 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.