S29GL512T12DHVV10
The S29GL512T12DHVV10 is a 512 Mb (64 MB) parallel MIRRORBIT™ flash memory for embedded and automotive systems. It features asynchronous random access times as fast as 100 ns and page access down to 15 ns, with I/O voltage from 1.65 V to 3.6 V. Supporting ×8/×16 data bus and 512-byte write buffer programming, it offers uniform 128 KB sector erase and up to 100,000 cycles. Operating from –40°C to +125°C, it meets AEC-Q100 automotive grade and offers 20-year data retention.
Key Specifications
| Complete manufacturer part number | S29GL512T12DHVV10 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL512T12DHVV10 is a 512 Mb (64 MB) parallel MIRRORBIT™ flash memory for embedded and automotive systems. It features asynchronous random access times as fast as 100 ns and page access down to 15 ns, with I/O voltage from 1.65 V to 3.6 V. Supporting ×8/×16 data bus and 512-byte write buffer programming, it offers uniform 128 KB sector erase and up to 100,000 cycles. Operating from –40°C to +125°C, it meets AEC-Q100 automotive grade and offers 20-year data retention. |
| Package / case | PG-LFBGA-64-801 |
| Product category | Flash memory |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 105 °C |
| In stock | 12,207 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.