S70GL02GS11FHV020
The S70GL02GS11FHV020 is a 2 Gbit (256 MB) parallel NOR flash memory using 65-nm MIRRORBIT™ technology in a 64-ball Fortified-BGA package. It features a dual die stack, 2048 uniform 128 KB sectors, and a ×16 data bus. Operating from 2.7 V to 3.6 V supply with Versatile I/O™ (1.65 V to VCC), it achieves 25 ns page access and 110 ns random access times. Typical endurance is 100,000 erase cycles per sector and 20-year data retention.
Key Specifications
| Complete manufacturer part number | S70GL02GS11FHV020 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S70GL02GS11FHV020 is a 2 Gbit (256 MB) parallel NOR flash memory using 65-nm MIRRORBIT™ technology in a 64-ball Fortified-BGA package. It features a dual die stack, 2048 uniform 128 KB sectors, and a ×16 data bus. Operating from 2.7 V to 3.6 V supply with Versatile I/O™ (1.65 V to VCC), it achieves 25 ns page access and 110 ns random access times. Typical endurance is 100,000 erase cycles per sector and 20-year data retention. |
| Package / case | PG-LFBGA-64-803 |
| Product category | Memory ICs |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 105 °C |
| In stock | 10,884 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.