S70GL02GT11FHI013
The S70GL02GT11FHI013 is a 2 Gb (256 MB) parallel NOR flash memory device based on 45 nm MIRRORBIT™ technology, featuring a dual-die stack in a 64-ball fortified BGA package. It operates at 3.0 V with I/O voltage from 1.65 V to VCC, supports ×8/×16 data bus, and delivers 110 ns random and 20 ns page access times.
Key Specifications
| Complete manufacturer part number | S70GL02GT11FHI013 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S70GL02GT11FHI013 is a 2 Gb (256 MB) parallel NOR flash memory device based on 45 nm MIRRORBIT™ technology, featuring a dual-die stack in a 64-ball fortified BGA package. It operates at 3.0 V with I/O voltage from 1.65 V to VCC, supports ×8/×16 data bus, and delivers 110 ns random and 20 ns page access times. |
| Package / case | PG-LFBGA-64-803 |
| Product category | Component specifications |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 6,031 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.
