S80KS2562GABHI020
The S80KS2562GABHI020 is a 256 Mb HYPERRAM™ self-refresh DRAM with a 1.8 V HYPERBUS™ DDR interface (8-bit DQ, RWDS, CS#, RESET#) in a 24-ball FBGA (5 x 5, 1.00 mm pitch). It runs up to 200 MHz for up to 400 MBps and tACC 35 ns, operates from VCC 1.7 V to 2.0 V at -40°C to 85°C, and supports linear or wrapped bursts (16-128 bytes), hybrid sleep, and 20 mA/22 mA max burst read/write current.
Key Specifications
| Complete manufacturer part number | S80KS2562GABHI020 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S80KS2562GABHI020 is a 256 Mb HYPERRAM™ self-refresh DRAM with a 1.8 V HYPERBUS™ DDR interface (8-bit DQ, RWDS, CS#, RESET#) in a 24-ball FBGA (5 x 5, 1.00 mm pitch). It runs up to 200 MHz for up to 400 MBps and tACC 35 ns, operates from VCC 1.7 V to 2.0 V at -40°C to 85°C, and supports linear or wrapped bursts (16-128 bytes), hybrid sleep, and 20 mA/22 mA max burst read/write current. |
| Package / case | PG-BGA-24-803 |
| Product category | Microcontrollers |
| Pins | 24 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 12,510 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.