S80KS2563GABHB020
S80KS2563GABHB020 is a 256 Mb HYPERRAM™ self-refresh DRAM with a 1.8 V Octal xSPI (DDR) interface for high-bandwidth external memory. It supports up to 200 MHz clock and 400 MBps throughput with configurable linear or wrapped bursts (16/32/64/128 bytes) and RWDS strobe/mask. Automotive AEC-Q100 Grade 2, it operates from 1.7 V to 2.0 V over -40 to 105°C and offers hybrid sleep and 15 µA deep power down.
Key Specifications
| Complete manufacturer part number | S80KS2563GABHB020 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | S80KS2563GABHB020 is a 256 Mb HYPERRAM™ self-refresh DRAM with a 1.8 V Octal xSPI (DDR) interface for high-bandwidth external memory. It supports up to 200 MHz clock and 400 MBps throughput with configurable linear or wrapped bursts (16/32/64/128 bytes) and RWDS strobe/mask. Automotive AEC-Q100 Grade 2, it operates from 1.7 V to 2.0 V over -40 to 105°C and offers hybrid sleep and 15 µA deep power down. |
| Package / case | PG-BGA-24-803 |
| Product category | Memory ICs |
| Pins | 24 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 105 °C |
| In stock | 11,964 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.