S80KS2564GACHA040
S80KS2564GACHA040 is a 256 Mb HYPERRAM™ self-refresh DRAM (PSRAM) for high-bandwidth code/data expansion in automotive ECUs. It uses a 1.7 V to 2.0 V HYPERBUS™ extended-IO x16 DDR interface with RWDS strobe and RESET#. The device supports up to 200 MHz clock, up to 800 MBps throughput, and 35 ns maximum access time, and is offered in a 49-ball FBGA, AEC-Q100 Grade 3 (-40°C to +85°C).
Key Specifications
| Complete manufacturer part number | S80KS2564GACHA040 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | S80KS2564GACHA040 is a 256 Mb HYPERRAM™ self-refresh DRAM (PSRAM) for high-bandwidth code/data expansion in automotive ECUs. It uses a 1.7 V to 2.0 V HYPERBUS™ extended-IO x16 DDR interface with RWDS strobe and RESET#. The device supports up to 200 MHz clock, up to 800 MBps throughput, and 35 ns maximum access time, and is offered in a 49-ball FBGA, AEC-Q100 Grade 3 (-40°C to +85°C). |
| Package / case | PG-BGA-49-800 |
| Product category | Microcontrollers |
| Pins | 49 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 11,747 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.
