S80KS2564GACHV043
S80KS2564GACHV043 is a 256 Mb HYPERRAM self-refresh DRAM (PSRAM) with a 16-bit HYPERBUS extended-IO DDR interface for low-pin-count memory expansion. It operates from 1.7 V to 2.0 V, supports up to 200 MHz clocking with throughput to 800 MBps and 35 ns max access time. RWDS provides source-synchronous read strobe and write masking. Standby current is as low as 1.55 A, with Hybrid Sleep and Deep Power Down modes.
Key Specifications
| Complete manufacturer part number | S80KS2564GACHV043 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | S80KS2564GACHV043 is a 256 Mb HYPERRAM self-refresh DRAM (PSRAM) with a 16-bit HYPERBUS extended-IO DDR interface for low-pin-count memory expansion. It operates from 1.7 V to 2.0 V, supports up to 200 MHz clocking with throughput to 800 MBps and 35 ns max access time. RWDS provides source-synchronous read strobe and write masking. Standby current is as low as 1.55 A, with Hybrid Sleep and Deep Power Down modes. |
| Package / case | PG-BGA-49-800 |
| Product category | Clock and timing ICs |
| Pins | 49 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 105 °C |
| In stock | 4,470 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.