S80KS5122GABHB023
S80KS5122GABHB023 is a 512 Mb HYPERRAM™ self-refresh DRAM with a 1.8 V HyperBus™ interface, 8-bit DQ and RWDS strobe, using DDR transfers up to 200 MHz (400 MBps) with 35 ns max tACC. It operates from 1.7 V to 2.0 V across -40 to 105°C (AEC-Q100 Grade 2). Linear or wrapped bursts (16 to 128 bytes), partial/full refresh, hybrid sleep and deep power-down are supported in a 24-ball FBGA.
Key Specifications
| Complete manufacturer part number | S80KS5122GABHB023 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | S80KS5122GABHB023 is a 512 Mb HYPERRAM™ self-refresh DRAM with a 1.8 V HyperBus™ interface, 8-bit DQ and RWDS strobe, using DDR transfers up to 200 MHz (400 MBps) with 35 ns max tACC. It operates from 1.7 V to 2.0 V across -40 to 105°C (AEC-Q100 Grade 2). Linear or wrapped bursts (16 to 128 bytes), partial/full refresh, hybrid sleep and deep power-down are supported in a 24-ball FBGA. |
| Package / case | PG-BGA-24-801 |
| Product category | Microcontrollers |
| Pins | 24 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 105 °C |
| In stock | 3,404 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.