S80KS5122GABHI023
S80KS5122GABHI023 is a 512 Mb HYPERRAM self-refresh DRAM with a 1.8 V HYPERBUS interface for high-bandwidth memory expansion in embedded and automotive systems. It supports DDR transfers up to 200 MHz (400 MBps) with 35 ns max access time, configurable linear or wrapped bursts, and hybrid sleep and deep power-down modes. It is in a 24-ball FBGA package and operates from 1.7 V to 2.0 V.
Key Specifications
| Complete manufacturer part number | S80KS5122GABHI023 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | S80KS5122GABHI023 is a 512 Mb HYPERRAM self-refresh DRAM with a 1.8 V HYPERBUS interface for high-bandwidth memory expansion in embedded and automotive systems. It supports DDR transfers up to 200 MHz (400 MBps) with 35 ns max access time, configurable linear or wrapped bursts, and hybrid sleep and deep power-down modes. It is in a 24-ball FBGA package and operates from 1.7 V to 2.0 V. |
| Package / case | PG-BGA-24-801 |
| Product category | Microcontrollers |
| Pins | 24 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 8,128 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.