S80KS5122GABHV020
S80KS5122GABHV020 is a 512 Mb HYPERRAM™ self-refresh DRAM using a 1.8 V HYPERBUS™ interface with CS#, RESET#, 8-bit DQ, and RWDS strobe. It supports DDR transfers up to 200 MHz for up to 400 MBps (3,200 Mb/s) throughput and 35 ns max access time. Supply is 1.7 V to 2.0 V, and power modes include interface standby, hybrid sleep, and deep power down (30 µA at 105°C). It comes in a 24-ball FBGA.
Key Specifications
| Complete manufacturer part number | S80KS5122GABHV020 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | S80KS5122GABHV020 is a 512 Mb HYPERRAM™ self-refresh DRAM using a 1.8 V HYPERBUS™ interface with CS#, RESET#, 8-bit DQ, and RWDS strobe. It supports DDR transfers up to 200 MHz for up to 400 MBps (3,200 Mb/s) throughput and 35 ns max access time. Supply is 1.7 V to 2.0 V, and power modes include interface standby, hybrid sleep, and deep power down (30 µA at 105°C). It comes in a 24-ball FBGA. |
| Package / case | PG-BGA-24-801 |
| Product category | Clock and timing ICs |
| Pins | 24 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 105 °C |
| In stock | 1,589 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.