STGAP2SICSAC

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STGAP2SICSAC — Manufacturer package reference image, SO 8 WIDE 300
Manufacturer package reference image

Galvanically isolated 4 A single gate driver for SiC MOSFETs

Key Specifications

Complete manufacturer part numberSTGAP2SICSAC
ManufacturerSTMicroelectronics
DescriptionGalvanically isolated 4 A single gate driver for SiC MOSFETs
Package / caseSO 8 WIDE 300
Product categoryIsolated SiC MOSFET gate drivers
Pins8
Operating junction temperature (TJ; manufacturer recommended conditions)-40 °C to 125 °C
Logic supply (VDD; recommended, referenced GND)3.1 V to5.25 V
Gate-driver positive supply (VH vs GNDISO; recommended)Max(VHON) to26 V; remain above the maximum UVLO turn-on threshold
Operating ambient temperature (Tamb; recommended)-40 C to125 C
Absolute junction interval (not recommended operation)-40 C to150 C
Storage temperature (Tstg; not operating)-50 C to150 C
Driver current capability (manufacturer feature; TJ25 C)4 A source/sink; this is gate-drive peak/short-circuit capability, not continuous load current
Output configuration (exact order table)GOUT-CLAMP
Electrical characterization contextTJ-40..125 C,VH18 V,VDD5 V unless specified
Propagation delay (VDD5 V, TJ25 C)45 ns typical;30..80 ns limits over TJ-40..125 C. At VDD3.3 V,60 ns typical and40..95 ns limits.
Packing typeTube
RoHS compliantEcopack2
GradeAutomotive
In stockContact for availability
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Exact ST ordering page verified on 2026-11-04. Temperature labels preserve manufacturer ordering scope; ambient or junction basis is not inferred. Package reference image is not a stock-lot photograph. Consult the datasheet for electrical limits and test conditions.

Manufacturer package reference image for SO 8 WIDE 300. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.

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Part Number: STGAP2SICSAC
Manufacturer: STMicroelectronics

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