LMG3425R030RQZT
Order the LMG3425R030RQZT - 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode | RQZ | 54 | -40 to 150 from Texas Instruments.
Key Specifications
| Complete manufacturer part number | LMG3425R030RQZT |
|---|---|
| Manufacturer | Texas Instruments |
| Description | Order the LMG3425R030RQZT - 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode | RQZ | 54 | -40 to 150 from Texas Instruments. |
| Package / case | VQFN (RQZ) |
| Product category | Electronic component |
| Pins | 54 |
| Operating temperature (exact ordering record) | -40 to 150 °C |
| Standard quantity / packing | 250 | SMALL T&R |
| VDS (max) (V) | 600 |
| RDS(on) (mΩ) | 30 |
| ID (max) (A) | 55 |
| Features | Bottom-side cooled, Cycle-by-cycle overcurrent protection, Ideal diode mode, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting |
| Rating | Catalog |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.