TPS7H6003HBX/EM

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TPS7H6003HBX/EM — Manufacturer package reference image, CFP (HBX)
Manufacturer package reference image

Order the TPS7H6003HBX/EM - Radiation-hardened, QML-V, 200V half-bridge GaN gate driver | HBX | 48 | 25 to 25 from Texas Instruments.

Key Specifications

Complete manufacturer part numberTPS7H6003HBX/EM
ManufacturerTexas Instruments
DescriptionOrder the TPS7H6003HBX/EM - Radiation-hardened, QML-V, 200V half-bridge GaN gate driver | HBX | 48 | 25 to 25 from Texas Instruments.
Package / caseCFP (HBX)
Product categoryGate drivers
Pins48
Bootstrap supply voltage (max) (V)200
Power switchGaNFET
Input supply voltage (min) (V)10
Input supply voltage (max) (V)16
Undervoltage lockout (typ) (V)8
RatingSpace
Propagation delay time (µs)0.035
Rise time (ns)0.4
Fall time (ns)4
Iq (mA)0.5
Input thresholdTTL
Channel input logicTTL/PWM
FeaturesDead time control, Interlock, Internal LDO
Driver configurationHalf bridge
Operating temperature (exact ordering record)25 to 25 °C
Standard quantity / packing1 | TUBE
In stock5,212 pcs
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.

Manufacturer package reference image for CFP (HBX). Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: TPS7H6003HBX/EM
Manufacturer: Texas Instruments
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