TPS7H6013HBX/EM
Order the TPS7H6013HBX/EM - Radiation-hardened, QML-V, 60V half-bridge GaN gate driver | HBX | 48 | 25 to 25 from Texas Instruments.
Key Specifications
| Complete manufacturer part number | TPS7H6013HBX/EM |
|---|---|
| Manufacturer | Texas Instruments |
| Description | Order the TPS7H6013HBX/EM - Radiation-hardened, QML-V, 60V half-bridge GaN gate driver | HBX | 48 | 25 to 25 from Texas Instruments. |
| Package / case | CFP (HBX) |
| Product category | Electronic component |
| Pins | 48 |
| Operating temperature (exact ordering record) | 25 to 25 °C |
| Standard quantity / packing | 15 | TUBE |
| Bootstrap supply voltage (max) (V) | 60 |
| Power switch | GaNFET |
| Input supply voltage (min) (V) | 10 |
| Peak output current (A) | 1.3 |
| Undervoltage lockout (typ) (V) | 8 |
| Rating | Space |
| Propagation delay time (µs) | 0.035 |
| Rise time (ns) | 0.4 |
| Fall time (ns) | 4 |
| Iq (mA) | 0.5 |
| Input threshold | TTL |
| Channel input logic | TTL/PWM |
| Features | Dead time control, Interlock, Internal LDO |
| Driver configuration | Half bridge |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.