Manufacturer package reference image
Galvanically isolated 4 A single gate driver for SiC MOSFETs
Key Specifications
| Complete manufacturer part number | STGAP2SICSACTR |
|---|---|
| Manufacturer | STMicroelectronics |
| Description | Galvanically isolated 4 A single gate driver for SiC MOSFETs |
| Package / case | SO 8 WIDE 300 |
| Product category | Isolated SiC MOSFET gate drivers |
| Pins | 8 |
| Operating junction temperature (TJ; manufacturer recommended conditions) | -40 °C to 125 °C |
| Logic supply (VDD; recommended, referenced GND) | 3.1 V to5.25 V |
| Gate-driver positive supply (VH vs GNDISO; recommended) | Max(VHON) to26 V; remain above the maximum UVLO turn-on threshold |
| Operating ambient temperature (Tamb; recommended) | -40 C to125 C |
| Absolute junction interval (not recommended operation) | -40 C to150 C |
| Storage temperature (Tstg; not operating) | -50 C to150 C |
| Driver current capability (manufacturer feature; TJ25 C) | 4 A source/sink; this is gate-drive peak/short-circuit capability, not continuous load current |
| Output configuration (exact order table) | GOUT-CLAMP |
| Electrical characterization context | TJ-40..125 C,VH18 V,VDD5 V unless specified |
| Propagation delay (VDD5 V, TJ25 C) | 45 ns typical;30..80 ns limits over TJ-40..125 C. At VDD3.3 V,60 ns typical and40..95 ns limits. |
| Packing type | Tape And Reel |
| RoHS compliant | Ecopack2 |
| Grade | Automotive |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Exact ST ordering page verified on 2026-11-04. Temperature labels preserve manufacturer ordering scope; ambient or junction basis is not inferred. Package reference image is not a stock-lot photograph. Consult the datasheet for electrical limits and test conditions.
Manufacturer package reference image for SO 8 WIDE 300. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
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